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SKU: E1.S 4TG2-P

Innodisk E1.S 4TG2-P Industrial SSD

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The Innodisk E1.S 4TG2-P Industrial SSD is a compact NVMe drive with PCIe Gen 4 x4 and 3D TLC NAND, offering capacities from 512GB to 8TB. It is engineered for edge servers and data centers demanding consistent, high-speed storage with enhanced data integrity.

 

Equipped with iCell power loss protection, AES 256-bit encryption, and TCG Opal 2.0 support, this SSD maintains data security and reliability. It operates efficiently across a wide temperature range (-40°C to 85°C) using dynamic thermal throttling and customizable heatsinks designed for industrial environments.

 

Its rugged design suits applications in industrial IoT, edge computing, and mission-critical data center deployments, providing scalable storage with extended lifecycle support in harsh conditions.

 

Order information

  • 512GB, Standard Grade (0°C ~ 70°C): DGE1S-C12DP2KCAEFP%
  • 512GB, Industrial Grade (-40°C ~ 85°C): DGE1S-C12DP2KWAEFP%
  • 1TB, Standard Grade (0°C ~ 70°C): DGE1S-01TDP2KCAEFP%
  • 1TB, Industrial Grade (-40°C ~ 85°C): DGE1S-01TDP2KWAEFP%
  • 2TB, Standard Grade (0°C ~ 70°C): DGE1S-02TDP2KCAEFP%
  • 2TB, Industrial Grade (-40°C ~ 85°C): DGE1S-02TDP2KWAEFP%
  • 4TB, Standard Grade (0°C ~ 70°C): DGE1S-04TDP2KCAEFP%
  • 4TB, Industrial Grade (-40°C ~ 85°C): DGE1S-04TDP2KWAEFP%
  • 8TB, Standard Grade (0°C ~ 70°C): DGE1S-08TDP2KCBEFP%
  • 8TB, Industrial Grade (-40°C ~ 85°C): DGE1S-08TDP2KWBEFP%
  • Operation temperature based on temperature obtained from S.M.A.R.T.
  • % : Non-existent = 5.9mm / H = 9.5mm enclosure / H1 = 15mm enclosure
  • E1.S 4TG2-P specifications are subject to change.

 

Key features

  • PCIe Gen 4 x4 interface with NVMe 1.4 support
  • Sequential read and write speeds up to 6,900/4,700MB/s
  • PLP (iCell) technology provides protection during unexpected power loss
  • LDPC ECC engine and Dynamic Thermal Management are supported

 

Specifications

  • Flash Type: 3D TLC
  • Interface: PCIe Gen 4 x4
  • Form Factor: E1.S
  • Capacity: 512GB ~ 8TB
  • Sequential R / W (MB/sec, max.): 6,900 / 4,700
  • P/E Cycle: 3,000
  • TBW (Max.): 19,129
  • Storage Temperature: -40°C ~ 85°C
  • Max. Power Consumption: 12W
  • Max. Channels: 8
  • External DRAM Buffer: Y
  • H/W Write Protect: N
  • S.M.A.R.T.: Y
  • AES: Y
  • TCG Opal: Y
  • Dimension (W x L x H/mm): 5.9mm : 31.5 x 111.5 x 5.9
  • Dimension (W x L x H/mm): 9.5mm : 33.75 x 118.75 x 9.5
  • Dimension (W x L x H/mm): 15mm : 33.75 x 118.75 x 15.0
  • Vibration: 20G@[7 ~ 2000Hz]
  • Shock: 1500G@0.5ms
  • MTBF:>3 million hours
  • Warranty: 3 Years

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